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Reliability analysis and comparison of ring-PUF based on probabilistic models.

Authors :
Bian, Jingchang
Huang, Zhengfeng
Lin, Yankun
Yang, Zhao
Liang, Huaguo
Ni, Tianming
Source :
Microelectronics Journal. Feb2024, Vol. 144, pN.PAG-N.PAG. 1p.
Publication Year :
2024

Abstract

—To address the issue of maladaptive reliability theory models in delay-based physical unclonable functions (PUF) of ring classes, this paper begins by analyzing the relationship between four key transistor parameters (channel length, channel width, threshold voltage, and gate oxide thickness) and delay sensitivity. Then establishes reliability quantification formulas for various PUF types, including ring oscillator PUF, k-out-of-1 PUF, Loop PUF, transient effect ring oscillator PUF, and duty cycle PUF. This analysis and comparison are conducted using the inverter delay model and probabilistic statistical methods to ensure fairness at the theoretical level. Finally, the proposed model is validated through simulation experiments, along with further analysis and comparison of ring-PUF. The results demonstrate that delay sensitivity can be utilized to assess the extent of delay impact when process parameters fluctuate. In terms of reliability, the ring-PUF can be ranked as follows: k-out-of-1 PUF, Loop PUF, ring oscillator PUF, transient effect ring oscillator PUF, and duty cycle PUF. This paper offers extensive technical guidance and theoretical support for ring PUF designers. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00262692
Volume :
144
Database :
Academic Search Index
Journal :
Microelectronics Journal
Publication Type :
Academic Journal
Accession number :
175165845
Full Text :
https://doi.org/10.1016/j.mejo.2023.106072