Thermal behavior of La3+, Ni2+ and Sn4+ co-doped CaCu3Ti4O12 ceramics dielectric response.

[Display omitted] • The thermal stability of the dielectric properties of the CCTO ceramic co-doped with La3+, Ni2+ and Sn4+ ions has been improved. • The effect of increasing the resistance of grain boundaries on improving the temperature stability of the dielectric loss tangent of Ca 1-x La 2x/3 Cu 3-y Ni y Ti 4-z Sn z O 12 ceramics has been studied. Dielectric properties control by elements co-doping is important research problem for application of ceramics based on CaCu 3 Ti 4 O 12 (CCTO) as a component of electronic devices. In this work, the effect of La3+, Ni2+ and Sn4+ co-doping on the dielectric properties of CCTO ceramics, including their thermal stability, was investigated. Solid solutions with compositions of Ca 1-x La 2x/3 Cu 2.95 Ni 0.05 Ti 3.7 Sn 0.3 O 12 (x = 0.010–0.055), Ca 0.94 La 0.027 Cu 3-y Ni y Ti 3.7 Sn 0.3 O 12 (y = 0.020–0.065), Ca 0.94 La 0.027 Cu 2.95 Ni 0.05 Ti 4-z Sn z O 12 (z = 0.25–0.4) were synthesized by the solid-state method at 970 °C. The incorporation of doping elements into the ceramic structure after sintering at 1080 °C was confirmed by X-ray diffraction data. Grain morphology and size of various solid solutions were estimated from scanning electron microscopy photographs. The optimal concentrations of doping elements were x = 0.04, y = 0.05, and z = 0.3, which is evident by high permittivity ε′ = 11,000 and low dielectric losses tanδ = 0.051 at f = 1 kHz. La3+, Ni2+ and Sn4+ co-doped CCTO ceramics demonstrated high stability of the permittivity in the temperature range from −60 to +125 °C. Based on the demonstrated dielectric properties, the presented solid solutions are suitable for use in ceramic capacitors. [ABSTRACT FROM AUTHOR]