Synthesis and characterization of (1-x)Bi0.9Sm0.1FeO3 - (x)BaZr0.15Ti0.85O3 based solid solution: Temperature-dependent dielectric and impedance properties.

Sample x=0.15, exhibits moderate leakage current density & highest dielectric constant. [Display omitted] • An attempt to investigate the thermo-dielectric behaviour of BSFO – BZT system. • Visualize the role of BZT content within the structural stability of the perovskite. • The variations of microstructural features validated structural transformations. • Dielectric anomalies correlated with possible transitions and conduction mechanisms. • Electrical heterogeneities elucidated by frequency dependent impedance characteristics. • Confirming the existence of a NTCR behavior in all samples. Lead-free solid solution of (1-x) Bi 0.9 Sm 0.1 FeO 3 − (x) BaZr 0.15 Ti 0.85 O 3 (BSFO − BZT) (x = 0.0, 0.10, 0.15, 0.20, 0.25, 0.50) ceramics were prepared using solid-state reaction method. The structural, morphological, temperature-dependent dielectric properties and leakage current were investigated. The structural investigation revealed the formation of perovskite structure coexisting with tetragonal and rhombohedral phases within (BSFO–BZT) ceramics. The dielectric measurements (within 303 K-773 K) confirmed the existence of a morphotropic phase boundary at x = 0.15 for the (BSFO–BZT) system. The frequency and temperature dependent electrical behavior were explained using Ac conductivity and impedance analysis. The leakage current behavior for all these samples was investigated using both space charge-limited conduction (SCLC) for bulk and Schottky emission (SE) for limited interface conduction approach, whereas the pure BSFO sample was found to be dominated by ohmic conduction, while the BZT-doped samples were dominated by grain boundary-limited conduction. The sample (0.80)Bi 0.9 Sm 0.1 FeO 3 -(0.15)BaZr 0.15 Ti 0.85 O 3 achieved largest dielectric constant 330 at 10 KHz along with a moderate leakage current density value of 3.54 × 10-5A/cm2 (which is quite lower than pure BSFO) proven its candidacy to develop a stable photovoltaic, multilayer actuators, and ferroelectric memory devices. [ABSTRACT FROM AUTHOR]