Cite
Molecular beam epitaxy of high-quality GaAs on Si (001) by multi-time thermal cycle annealing.
MLA
Jiang, Chen, et al. “Molecular Beam Epitaxy of High-Quality GaAs on Si (001) by Multi-Time Thermal Cycle Annealing.” Applied Physics A: Materials Science & Processing, vol. 130, no. 1, Jan. 2024, pp. 1–8. EBSCOhost, https://doi.org/10.1007/s00339-023-07162-3.
APA
Jiang, C., Liu, H., Liu, Z., Ye, J., Zhai, H., Liu, S., Lin, J., Wang, Q., & Ren, X. (2024). Molecular beam epitaxy of high-quality GaAs on Si (001) by multi-time thermal cycle annealing. Applied Physics A: Materials Science & Processing, 130(1), 1–8. https://doi.org/10.1007/s00339-023-07162-3
Chicago
Jiang, Chen, Hao Liu, Zhuoliang Liu, Jihong Ye, Hao Zhai, Shuaicheng Liu, Jiacheng Lin, Qi Wang, and Xiaomin Ren. 2024. “Molecular Beam Epitaxy of High-Quality GaAs on Si (001) by Multi-Time Thermal Cycle Annealing.” Applied Physics A: Materials Science & Processing 130 (1): 1–8. doi:10.1007/s00339-023-07162-3.