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Water-assisted mass preparation of CsPbBr3-CsPb2Br5-CsPbIxBr3-x composite wafers for high-performance X-ray detection.

Authors :
Ba, Yanshuang
Han, Yaoyu
Zhu, Weidong
Wang, Tianran
Chi, Jiawei
Xi, He
Zhao, Tianlong
Chen, Dazheng
Zhang, Jincheng
Zhang, Chunfu
Hao, Yue
Source :
Chemical Engineering Journal. Jan2024, Vol. 479, pN.PAG-N.PAG. 1p.
Publication Year :
2024

Abstract

[Display omitted] CsPbBr 3 -CsPb 2 Br 5 wafer is obtained by water-assisted coprecipitation method, and a spray-coating method is further utilized to convert it into CsPbBr 3 -CsPb 2 Br 5 -CsPbI x Br 3-x composite wafer, which exhibits superior performance and reliability of X-ray detection. • Water-assisted coprecipitation is proposed to prepare high-quality CsPbBr 3 -CsPb 2 Br 5 powder. • CsPbBr 3 -CsPb 2 Br 5 wafer is obtained by pressure-induced aggregation of the powder. • Spray-coating of CsI/H 2 O onto CsPbBr 3 -CsPb 2 Br 5 wafer can convert it into CsPbBr 3 -CsPb 2 Br 5 -CsPbI x Br 3-x composite wafer. • X-ray detector with the composite wafer exhibits much improved performance and reliability. Lead halide perovskite wafers with large lateral size, controllable thickness, and desirable optoelectronic characteristics are promising for X-ray detectors. Herein, CsPbBr 3 -CsPb 2 Br 5 -CsPbI x Br 3-x composite wafers are prepared via water-assisted coprecipitation and spray coating. The preparation involved pressure-induced aggregation of the CsPbBr 3 -CsPb 2 Br 5 powder produced through coprecipitation using of H 2 O/MeOH mixed solvent into CsPbBr 3 -CsPb 2 Br 5 wafers, followed by spraying a CsI/H 2 O solution onto the wafer surface to transform it into a CsPbBr 3 -CsPb 2 Br 5 -CsPbI x Br 3-x composite wafer. Multiple favorable properties, including compact surface, high crystallinity, excellent carrier transportation, large/adjustable size, low cost, and mass producibility, can be identified for the CsPbBr 3 -CsPb 2 Br 5 -CsPbI x Br 3-x composite wafer. An X-ray detector with high performance and excellent stability is realized with this wafer. It yields high resistivity (ρ; 1.3 × 109 Ω cm−2, exceptional carrier mobility (μ)/lifetime (τ) (μτ) product (1.01 × 10−3 cm2 V−1), high sensitivity (20555.1 μC Gy air −1 cm−2), and low detection limit (127.7 nGy s−1). Hence, our research provides a reliable strategy for optimizing the structure and performance of perovskite wafer-based X-ray detectors and enabling mass preparation. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
13858947
Volume :
479
Database :
Academic Search Index
Journal :
Chemical Engineering Journal
Publication Type :
Academic Journal
Accession number :
174793020
Full Text :
https://doi.org/10.1016/j.cej.2023.147726