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Conductive BSi4 monolayer with superior electrochemical performance for alkali metal ion batteries.

Authors :
Du, Junliang
Lin, He
Huang, Yong
Source :
Materials Science in Semiconductor Processing. Mar2024, Vol. 172, pN.PAG-N.PAG. 1p.
Publication Year :
2024

Abstract

Silicon has received great interest in the development of next-generation metal ion batteries (MIBs) due to its extremely high capacity; however, the large volume expansion during intercalation process and intrinsically low electrical conductivity has severely hindered its electrochemical performance. In this work, we theoretically report that the recently-developed BSi 4 monolayer is an appealing candidate as a flexible anode for high-performance MIBs. The BSi 4 anode exhibits high mechanical and thermal stability with inherent metallicity, which is very advantageous for the fast electronic transport during battery cycle. All metal atoms are stably deposited on the anode surface with high ion mobility. The lowest diffusion barrier is predicted to be 0.33 eV for Li, 0.22 eV for Na, and 0.17 eV for K. Remarkably, the BSi 4 anode possesses high Li/Na/K storage capacities of 1087.97, 1087.97 and 870.37 mA h/g, and low averaged open circuit voltages of 0.80, 0.52 and 0.63 V. Moreover, the BSi 4 anode could withstand a large ultimate strain of 16.72 % (20.27 %) along zigzag (armchair) direction, showing a good mechanical flexibility. [Display omitted] • A detailed investigation of BSi 4 monolayer as a MIB anode is performed. • High electrical conductivity and good mechanical flexibility are found in the BSi 4 monolayer. • The BSi 4 anode delivers a high storage capacity for Li/Na/K (1087.97, 1087.97 and 870.37 mA h/g). • The lowest Li/Na/K diffusion barriers on the BSi 4 anode are 0.33, 0.22 and 0.17 eV, respectively. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
13698001
Volume :
172
Database :
Academic Search Index
Journal :
Materials Science in Semiconductor Processing
Publication Type :
Academic Journal
Accession number :
174760431
Full Text :
https://doi.org/10.1016/j.mssp.2023.108086