Improving the performance of solution-based CZTSSe absorber by selenization annealing with selenium powder in argon.

Due to the low toxicity and abundance of nature, Cu 2 ZnSn(S,Se) 4 (CZTSSe) has been considered as a promising solar cell material. The absorber is the most critical structure in a solar cell, which determines the performance of the cell. Selenium-rich CZTSSe can be formed by replacing S atoms of CZTS with Se. However, the method of adding Se element through H 2 Se is constrained due to the toxicity of H 2 Se. The work adopted a method to prepare excellent CZTSSe absorbers without H 2 Se. The stack structure CZTS precursor films were prepared by solution-based deposition, and CZTSSe absorbers were obtained after selenization annealing at 550 °C with 0.1, 0.2 and 0.3 g of selenium powders in argon, respectively. The obtained CZTSSe absorbers had pure CZTSSe phase, high absorption coefficients and appropriate bandgaps. After annealing with 0.2 g of selenium powder, the holes in the CZTSSe film diminished, and the grain size of absorbers increased from 0.31 µm in the CZTS absorber to 1.17 µm. The peaks of Se 3d for CZTSSe absorber were observed, the lattice spacing of plane (112) increased from 3.10 Å to 3.22 Å, and the work function decreased from 5.31 eV to 5.19 eV. The improved performance of absorber will be of great significance for the efficiency of CZTSSe device. • The CZTS precursor films were obtained by solution-based deposition. • The CZTSSe absorbers were obtained after selenization annealing with selenium powder in argon. • The grain size of the CZTSSe absorbers increased to the micron level. • The obtained CZTSSe absorbers had high absorption coefficients and appropriate band gaps. • The lattice spacing of plane (112) for CZTSSe absorber increased and the work function decreased. [ABSTRACT FROM AUTHOR]