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Experimental Investigation on SiC MOSFET Turn-Off Power Loss Reduction Using the Current Sink Capacitor Technique.

Authors :
Harasimczuk, Michał
Kopacz, Rafał
Trochimiuk, Przemysław
Miśkiewicz, Rafał
Rąbkowski, Jacek
Source :
Energies (19961073). Jan2024, Vol. 17 Issue 1, p189. 12p.
Publication Year :
2024

Abstract

This paper investigates the current sink capacitor technique as a method to minimize the turn-off power losses of SiC MOSFETs operated with zero-voltage switching (ZVS). The method is simple and is based on adding auxiliary capacitors in parallel to the transistors, allowing the sink capacitor to take over part of the channel current, thus limiting the power loss while also advantageously lowering the d v d s / d t ratio. The technique is validated and experimentally studied based on a single-pulse test setup with 1200 V-rated SiC MOSFETs, with several capacitances and gate resistance values, at various switched currents up to roughly 60 A. It is shown that by employing even very small capacitances, in the range of nanofarads, the turn-off power loss can be reduced by over tenfold, with a negligible impact on the volume and complexity of the system. Thus, the presented method can be effectively employed to improve soft-switched power converters. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
19961073
Volume :
17
Issue :
1
Database :
Academic Search Index
Journal :
Energies (19961073)
Publication Type :
Academic Journal
Accession number :
174714857
Full Text :
https://doi.org/10.3390/en17010189