Low temperature plasma deposited SiO2/organosilicon stacked film for transparent gate dielectric of InGaZnO thin film transistor.

• SiO2 and organosilicon dielectric films are deposited at low temperature. • SiO2 and organosilicon dielectric films are deposited from the same reactant. • H in organosilicon film diffused into the active layer and acts as a shallow donor. • The multilayer dielectric films have potential in transparent flexible devices. In this article, a 5-pair SiO 2 /organosilicon stacked film fabricated by inductively coupled plasma-enhanced chemical vapor deposition from hexamethyldisiloxane /O 2 at low temperature was introduced as InGaZnO thin film transistor (IGZO TFT) gate dielectric for transparent flexible displays. The dielectric film has the flexibility of organosilicon while maintaining the high dielectric strength of SiO 2. Due to the introduction of organosilicon, which connects with the IGZO active layer, the deep-state electron traps formed by oxygen vacancies are reduced, and moderate hydrogen diffused into IGZO layer becomes a shallow donor. Under the premise of high transmittance of the dielectric film, a high-performance TFT with mobility of 15.60 cm2/Vs was obtained. [ABSTRACT FROM AUTHOR]