Field-free magnetic switching dependence on lateral interfaces in synthetic antiferromagnets by ion implantation.

Field-free spin–orbit torque switching in synthetic antiferromagnets (SAF) holds significant promise for high-density spintronic memory and logic devices. In this paper, we realize the field-free magnetization switching in SAFs due to the local ion implantation-induced 45° lateral interface and symmetry breaking. Moreover, the magnetization switching ratio is enlarged by the lateral interface owing to the superimposition of a damping-like effective field and a symmetry-breaking effective field. Our work is significant for the development of magnetic random-access memory technology with high-speed and anti-interference ability. [ABSTRACT FROM AUTHOR]