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Field-free magnetic switching dependence on lateral interfaces in synthetic antiferromagnets by ion implantation.
- Source :
-
Applied Physics Letters . Jan2024, Vol. 124 Issue 1, p1-7. 7p. - Publication Year :
- 2024
-
Abstract
- Field-free spin–orbit torque switching in synthetic antiferromagnets (SAF) holds significant promise for high-density spintronic memory and logic devices. In this paper, we realize the field-free magnetization switching in SAFs due to the local ion implantation-induced 45° lateral interface and symmetry breaking. Moreover, the magnetization switching ratio is enlarged by the lateral interface owing to the superimposition of a damping-like effective field and a symmetry-breaking effective field. Our work is significant for the development of magnetic random-access memory technology with high-speed and anti-interference ability. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 124
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 174636870
- Full Text :
- https://doi.org/10.1063/5.0174124