2-mm-thick large-area CdTe double-sided strip detectors for high-resolution spectroscopic imaging of X-ray and gamma-ray with depth-of-interaction sensing.

We developed a 2-mm-thick CdTe double-sided strip detector (CdTe-DSD) with a 250 μ m strip pitch, which has high spatial resolution with a uniform large imaging area of 10 cm 2 and high energy resolution with high detection efficiency in tens to hundreds keV. The detector can be employed in a wide variety of fields for quantitative observations of hard X-ray and soft gamma-ray with spectroscopic imaging, for example, space observation, nuclear medicine, and non-destructive elemental analysis. This detector is thicker than the 0.75-mm-thick one previously developed by a factor of ∼ 2.7, thus providing better detection efficiency for hard X-rays and soft gamma rays. The increased thickness could potentially enhance bias-induced polarization if we do not apply sufficient bias and if we do not operate at a low temperature, but the polarization is not evident in our detector when a high voltage of 500 V is applied to the CdTe diode and the temperature is maintained at − 20 °C during one-day experiments. The "Depth Of Interaction" (DOI) dependence due to the CdTe diode's poor carrier-transport property is also more significant, resulting in much DOI information while complicated detector responses such as charge sharings or low-energy tails that exacerbate the loss in the energy resolution. In this paper, we developed 2-mm-thick CdTe-DSDs, studied their response, and evaluated their energy resolution, spatial resolution, and uniformity. We also constructed a theoretical model to understand the detector response theoretically, resulting in reconstructing the DOI with an accuracy of 100 μ m while estimating the carrier-transport property. First, we evaluated the energy resolution using 22Na, 133Ba, and 57Co reconstructing the DOI effect from the energy correlation on both the anode and cathode sides. We obtained an energy resolution of 4.3 keV (FWHM) at 356 keV. Second, we formulated a theoretical detector-response model that reproduced the experimental data. Using the model, we determined the mobility-lifetime products of carriers μ τ e , h = (4 ± 1) × 1 0 − 3 , (1. 15 ± 0. 05) × 1 0 − 4 [cm 2 /V] with the space charge density of n s p = − 6. 0 × 1 0 10 [1/cm − 3 ] and then reconstructed the DOI with an accuracy of 100 μ m. Finally, we evaluated the spatial resolution and demonstrated to resolve patterns of 250- μ m -width slits with an X-ray test chart. We found no positional variation in the detector response. We realized the detector that has high energy resolution and high 3D spatial resolution with a uniform large imaging area. [ABSTRACT FROM AUTHOR]