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Hole diffusion effect on the minority trap detection and non-ideal behavior of NiO/β-Ga2O3 heterojunction.
- Source :
-
Applied Physics Letters . 12/18/2023, Vol. 123 Issue 25, p1-6. 6p. - Publication Year :
- 2023
-
Abstract
- A NiO/β-Ga2O3 heterojunction was fabricated by sputtering a highly p-doped NiO layer onto β-Ga2O3. This heterojunction showed a low leakage current and a high turn-on voltage (Von) compared to a Ni/β-Ga2O3 Schottky barrier diode. The extracted Von from the NiO/β-Ga2O3 heterojunction's forward current–voltage characteristics was ∼1.64 V, which was lower than the extracted built-in potential voltage (Vbi) obtained from the capacitance–voltage curve. To explain this difference, deep level transient spectroscopy and Laplace-deep level transient spectroscopy were employed to study majority and minority traps in β-Ga2O3 films. A minority trap was detected near the surface of β-Ga2O3 under a reverse bias of −1 V but was not observed at −4 V, indicating its dependence on hole injection density. Using Silvaco TCAD, the hole diffusion length from P+-NiO to β-Ga2O3 was determined to be 0.15 μm in equilibrium, which is increased with increasing forward voltage. This finding explained why the trap level was not detected at a large reverse bias. Moreover, hole diffusion from NiO into β-Ga2O3 significantly affected the β-Ga2O3 surface band bending and impacted transport mechanisms. It was noted that the energy difference between the conduction band minimum (CBM) of β-Ga2O3 and the valence band maximum (VBM) of NiO was reduced to 1.60 eV, which closely matched the extracted Von value. This supported the dominance of direct band-to-band tunneling of electrons from the CBM of β-Ga2O3 to the VBM of NiO under forward bias voltage. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 123
- Issue :
- 25
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 174420509
- Full Text :
- https://doi.org/10.1063/5.0180427