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On the memory-switching property of ternary CuZnS thin films.
- Source :
-
Applied Physics A: Materials Science & Processing . Dec2023, Vol. 129 Issue 12, p1-9. 9p. - Publication Year :
- 2023
-
Abstract
- Copper–zinc sulfide (CZS) is a ternary earth-abundant and non-toxic material having a wide range of optoelectronic applications. This investigation presents the bipolar-switching characteristics of CZS-switching layer-based devices for resistive memory-switching applications. The material was deposited on the fluorine doped tin oxide (FTO) substrate by spray pyrolysis method at a substrate temperature of 350 °C. Structural analysis indicate that the as prepared films consists of a composite structure of CuS and ZnS phases. The deposited films are p-type in nature. Resistive memory-switching devices are fabricated with the structure of FTO/CZS/Ag. The observed ON/OFF ratio of ~ 320 suggests that the device possesses good memory-switching properties. The formation and rupture of the conductive filaments of the FTO/CZS/Ag memory device were detected from the hysteresis curve. This confirms that CZS material can be used as the switching layer to fabricate a simple, cost-effective, and non-toxic bipolar device, which can deliver the perfect switching characteristics. [ABSTRACT FROM AUTHOR]
- Subjects :
- *THIN films
*COMPOSITE structures
*TIN oxides
*PYROLYSIS
*FIBERS
Subjects
Details
- Language :
- English
- ISSN :
- 09478396
- Volume :
- 129
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Applied Physics A: Materials Science & Processing
- Publication Type :
- Academic Journal
- Accession number :
- 174342380
- Full Text :
- https://doi.org/10.1007/s00339-023-07118-7