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Photovoltaic ZnO/SnSx heterostructures obtained by "electrochemical deposition-successive ionic layer adsorption and reaction" approach.
- Source :
-
Applied Physics A: Materials Science & Processing . Dec2023, Vol. 129 Issue 12, p1-13. 13p. - Publication Year :
- 2023
-
Abstract
- In this work, ZnO/SnS/indium tin oxide (ITO)/glass functional heterostructures have been developed using a combined approach of electrodeposition of a SnSx layer and successive ionic layer adsorption and reaction (SILAR) of the ZnO layer. The high-quality 400 nm-thick orthorhombic SnS0.9–0.95 films were formed on the ITO substrates with a thickness of 130 nm and an electrical conductivity of less than 40 Ω/□. Chemical deposition of ZnO thin films by the SILAR method allowed to deposit hexagonal films with a thickness of about 200 nm. The morphology, elemental and phase composition of the films were characterized by Scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and X-ray diffraction. The band gap (1.4 eV for SnSx and 3.3 eV for ZnO), as well as the high light absorption coefficient of SnSx films (1–2) × 104 cm–1 were determined. The obtained ZnO/SnSx/ITO heterostructures formed by the electrodeposition–SILAR cycle showed a photoEMF value of 198 mV. These properties make ZnO/SnS heterostructure promising for low-cost solar cells based on affordable materials. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09478396
- Volume :
- 129
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Applied Physics A: Materials Science & Processing
- Publication Type :
- Academic Journal
- Accession number :
- 174342372
- Full Text :
- https://doi.org/10.1007/s00339-023-07108-9