Study on the preparation of InN films under different substrates and nitrogen-argon flow ratios and the effect of operating temperature on carrier transport in p-NiO/n-InN heterojunctions.

In this paper, the properties of indium nitride (InN) semiconductor films deposited by magnetron sputtering were studied. The effects of different substrates (Al 2 O 3 , ITO and Si) and different nitrogen-argon flow ratios on the crystal quality of InN films were compared. The crystal structure, surface morphology, optical and electrical properties of InN films were systematically studied. The results showed that the crystallization quality of InN thin film was the best when the flow ratio of nitrogen to argon was 30/0 on Al 2 O 3 substrate. Then the p-NiO/n-InN/AlN heterojunction device was prepared on Al 2 O 3 by using AlN as buffer layer, and the electrical properties of the devices at different operating temperatures were analyzed. Finally, high rectification characteristics and good temperature stability were obtained. This study provides a reference for the preparation of InN films on different substrates and the application of InN-based devices. • The effects of different substrate types on the physical properties of InN films were studied. • The InN films with relatively good quality was obtained by magnetron sputtering. • Device with high rectification characteristics typical based on p-NiO/n-InN structure was prepared. • The influence of the operating temperature of the device on the rectification characteristics was studied. [ABSTRACT FROM AUTHOR]