Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation.

[Display omitted] • HEMTs are very attractive candidates for 5G applications. • Low frequency noise were performed on AlGaN/GaN HEMTs with different channel orientation. • LF noise is an important tool for studying reliability of GaN-based HEMTs. • Flicker noise is due to trapping in the AlGaN barrier of High-Electron-Mobility Transistors. • Noise Power Spectral Density of AlGaN/GaN High-Electron-Mobility Transistors. The performance of AlGaN/GaN High-Electron Mobility Transistors (HEMTs) fabricated on 〈1 1 1〉 silicon substrates has been experimentally investigated, aiming to verify the effect of different channel orientations on the main electrical parameters, such as drain current (I D), threshold voltage, transconductance (g m), and Drain-Induced Barrier Lowering (DIBL). Moreover, the noise Power Spectral Density (PSD) with different channel orientations has also been characterized in linear operation. No noticeable differences on the electrical and noise PSD characteristics have been observed between the GaN channel orientations (0°, 90° and 45°). [ABSTRACT FROM AUTHOR]