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THE INFLUENCE OF FRACTAL DIMENSION OF OXIDE LAYER ON PASSIVE OXIDATION OF THE C/SiC COMPOSITE.

Authors :
ZHU, QINGYONG
HUANG, JINQUAN
XIAO, XIAO
Source :
Fractals. 2023, Vol. 31 Issue 9, p1-23. 23p.
Publication Year :
2023

Abstract

The C/SiC composite is a promising material for ablation-resistant thermal protection in near-space hypersonic environments. The formation of an SiO2 oxide layer through passive oxidation on the surface of the composite is a significant factor influencing its performance. It is essential to accurately predict the thickness of the SiO2 oxide layer and the recession and mass loss of the C/SiC composite during passive oxidation. The SiO2 oxide layer is a typical porous media exhibiting self-similarity and thus fractal theory can be applied to establish the relation between the oxygen flow rate and microstructural parameters of the oxide layer. The Weierstrass–Mandelbrot (WM) function is employed to simulate the rough interfaces between the SiO2 oxide layer and the C/SiC composite to evaluate the influence of the fractal dimensions of the oxide layer on the performance of thermal protection of the C/SiC composite. The results show that the C/SiC composite exhibits improved thermal protection performance when accompanied by a lower tortuosity fractal dimension and a higher pore area fractal dimension of the oxide layer. Conversely, the composite demonstrates enhanced ablation resistance with a higher tortuosity fractal dimension and a lower pore area fractal dimension of the oxide layer. The predictions of the calculation model show good agreement with the experimental data and demonstrate the critical influence of microstructural parameters of the oxide layer on passive oxidation of the composite, providing practical implications for designing materials with desired thermal protection or ablation resistance properties. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
0218348X
Volume :
31
Issue :
9
Database :
Academic Search Index
Journal :
Fractals
Publication Type :
Academic Journal
Accession number :
173969358
Full Text :
https://doi.org/10.1142/S0218348X23501232