Simulation and comparison of capacitance voltage characteristics in copper (II) oxide and silicon dioxide-based MOS capacitor.

The aim of the work is to simulate and analyze the capacitance-voltage characteristics of the copper (II) oxide (CuO) based novel MOS capacitor (Ag/CuO/Si) compared with Silicon dioxide (SiO2) MOS capacitor (Ag/SiO2/Si) at temperatures varying from 100 K to 560 K.Ag/CuO/Si and Ag/SiO2/Si are the two groups with a sample size of 24 for each group. To compute the sample size, a pretest power of 80% and a type I error rate of 0.05 were taken. The stack capacitance of copper (II) oxide (CuO) is 2.905 E−7 F/cm2 and the stack capacitance of silicon dioxide (SiO2) is 6.794 E−8 F/cm2 measured at 100K with a significance value of 0.001 (p<0.05). Copper (II) oxide (CuO) based MOS capacitor is significantly better than that of silicon dioxide (SiO2). [ABSTRACT FROM AUTHOR]