The Si (001) substrate with sub-nano streaky surface: Preparation and its application to high-quality growth of GaAs heteroepitaxial-layer.

MLA

Zhang, Yidong, et al. “The Si (001) Substrate with Sub-Nano Streaky Surface: Preparation and Its Application to High-Quality Growth of GaAs Heteroepitaxial-Layer.” Applied Surface Science, vol. 643, Jan. 2024, p. N.PAG. EBSCOhost, https://doi.org/10.1016/j.apsusc.2023.158685.

APA

Zhang, Y., Li, J., Ren, X., Wang, Q., Liu, H., Jiang, C., Li, C., & Wei, X. (2024). The Si (001) substrate with sub-nano streaky surface: Preparation and its application to high-quality growth of GaAs heteroepitaxial-layer. Applied Surface Science, 643, N.PAG. https://doi.org/10.1016/j.apsusc.2023.158685

Chicago

Zhang, Yidong, Jian Li, Xiaomin Ren, Qi Wang, Hao Liu, Chen Jiang, Chuanchuan Li, and Xin Wei. 2024. “The Si (001) Substrate with Sub-Nano Streaky Surface: Preparation and Its Application to High-Quality Growth of GaAs Heteroepitaxial-Layer.” Applied Surface Science 643 (January): N.PAG. doi:10.1016/j.apsusc.2023.158685.