Tolerance to the proton irradiation of the Gd3AlxGa5-xO12 (x = 0,1,2,3) scintillation crystals for future collider experiments.

The studies of the influence of proton irradiation on the optical properties of the undoped Gd 3 Al x Ga 5-x O 12 (x = 0,1,2,3) single crystals were carried out. A set of induced absorption bands have been detected, which are most pronounced in Gd 3 Ga 5 O 12. The origin of the bands is discussed. It is shown that the intensity of the induced absorption bands gradually decreases and no additional bands appear as gallium is replaced by aluminum. The conclusion on the enhancement of the radiation hardness of Gd 3 Al x Ga 5-x O 12 with the substitution of Ga cations with Al is done. • The proton irradiation affects the absorption of Gd 3 Al x Ga 5-x O 12 crystals. • Induced absorption arises due to F centers and ions displacement defects. • Induced absorption is supressed as gallium is replaced by aluminum. • Substitution of Ga with Al ions improves radiation hardness of Gd 3 Al x Ga 5-x O 12. [ABSTRACT FROM AUTHOR]