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Optimization of RF Frequencies in Dual-Frequency Capacitively Coupled Plasma Apparatus Using Genetic Algorithm (GA) and Plasma Simulation.

Authors :
Takagi, Shigeyuki
Sekine, Makoto
Nakaegawa, Tatsuhiro
Hsiao, Shih-Nan
Source :
IEEE Transactions on Semiconductor Manufacturing. Nov2023, Vol. 36 Issue 4, p547-552. 6p.
Publication Year :
2023

Abstract

As a method to optimize the power frequency of dual-frequency plasma, we propose an optimization method that combines genetic algorithm and plasma simulation. A two-dimensional plasma simulation model of Ar plasma was constructed with a fluid model. Combining this simulation model with a genetic algorithm, 300 cases of plasma conditions with high plasma density and small variation in electron density were calculated. As a result, the optimum conditions were 175 to 210 MHz for the high-frequency generator and 1.0 to 2.5 MHz for the low-frequency generator. Furthermore, two types of single objective functions that combine the electron density and the variation rate were proposed. The single objective functions with emphasis on electron density and with emphasis on variation rate were introduced, and each objective function was optimized. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
08946507
Volume :
36
Issue :
4
Database :
Academic Search Index
Journal :
IEEE Transactions on Semiconductor Manufacturing
Publication Type :
Academic Journal
Accession number :
173370003
Full Text :
https://doi.org/10.1109/TSM.2023.3282566