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Over 100 mV VOC Improvement for Rear Passivated ACIGS Ultra‐Thin Solar Cells.

Authors :
Oliveira, António
Curado, Marco
Teixeira, Jennifer
Tomé, Daniela
Çaha, Ihsan
Oliveira, Kevin
Lopes, Tomás
Monteiro, Margarida
Violas, André
Correira, Maria
Fernandes, Paulo
Deepak, Francis
Edoff, Marika
Salomé, Pedro
Source :
Advanced Functional Materials. 10/25/2023, Vol. 33 Issue 44, p1-16. 16p.
Publication Year :
2023

Abstract

A decentralized energy system requires photovoltaic solutions to meet new aesthetic paradigms, such as lightness, flexibility, and new form factors. Notwithstanding, the materials shortage in the Green Transition is a concern gaining momentum due to their foreseen continuous demand. A fruitful strategy to shrink the absorber thickness, meeting aesthetic and shortage materials consumption targets, arises from interface passivation. However, a deep understanding of passivated systems is required to close the efficiency gap between ultra‐thin and thin film devices, and to mono‐Si. Herein, a (Ag,Cu)(In,Ga)Se2 ultra‐thin solar cell, with 92% passivated rear interface area, is compared with a conventional nonpassivated counterpart. A thin MoSe2 layer, for a quasi‐ohmic contact, is present in the two architectures at the contacts, despite the passivated device narrow line scheme. The devices present striking differences in charge carrier dynamics. Electrical and optoelectronic analysis combined with SCAPS modelling suggest a lower recombination rate for the passivated device, through a reduction on the rear surface recombination velocity and overall defects, comparing with the reference solar cell. The new architecture allows for a 2% efficiency improvement on a 640 nm ultra‐thin device, from 11% to 13%, stemming from an open circuit voltage increase of 108 mV. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
1616301X
Volume :
33
Issue :
44
Database :
Academic Search Index
Journal :
Advanced Functional Materials
Publication Type :
Academic Journal
Accession number :
173231163
Full Text :
https://doi.org/10.1002/adfm.202303188