Longitudinal-optical-phonon resonant thermal emission efficiency and spectrum control of metal-GaAs surface micro-stripe structures.

[Display omitted] • Surface micro-structures on GaAs provide thermal radiation at 8.5THz, which has quite different properties from phonon polariton. • Surface Au-GaAs structures enables radiation and absorption control including sub-diffractional effect. • Structural dependence of intensity and line width is scrutinized by experimentally and theoretically. • Short radiative lifetime of LO phonon on the order of 1 ps is expected. • This thermal emission provides future high-efficiency THz sources. Phonon-based tera-Hertz or mid-infrared emission has been investigated because it can be applied to high-efficiency light sources for optical communication and material diagnostics, where thermal energy can be utilized as an energy source of emission. Particularly, nano- and micro-surface structures have been investigated for versatile emission controllability. We present the polarized longitudinal optical (LO) phonon resonant thermal emission of radiation (LORE) peaked at approximately 8.5 THz in a range of 450–650 K from simple surface Au–GaAs–Au micro-stripe structures on undoped (u-) GaAs wafers, where the metal component, which has been avoided for surface phonon polariton (SPhP) emission, is introduced. This LORE is based on electric dipoles formed by coherently oscillating polarization charges on pairs of interfaces and has a feature of structure size or emission direction-independent frequency, which is quite different from the properties of SPhPs. The dependence of emission properties on structural factors and temperature reveals the approximately evenly matched radiative and nonradiative LO-phonon annihilation rates in the local surface field and shows the controllability of emission and absorption balance based on the surface structures. Higher emission efficiency in the higher temperature region is found for structures with narrow emission windows of less than 2 μm. The decrease in the volume occupied by electric dipoles reduces the reabsorption probability of LORE, which shortens the effective radiative lifetime and, resultantly, increases the fraction of the radiative rate in the total annihilation rate. By comparing the emission from a pure graphite wafer, a short LORE mean time interval of approximately 2 ps is found. The background emission subject to Planck's law is significantly reduced particularly in the region of 250–300 cm−1 using emission window widths narrower than 2 μm because of the sub-diffraction phenomenon. [ABSTRACT FROM AUTHOR]