Investigating the doping effect of molybdenum oxide on a p-type organic thin-film transistor and their application to unipolar circuits.

This study focuses on investigating the doping effect of molybdenum oxide (MoO X) on a p-type organic dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) thin-film transistor (TFT) and its implications for various electronic applications. Specifically, we examined the influence of the doping position of MoO X on the transistor performance. When MoO X was doped between the electrode and the semiconductor (ME-OTFT), it facilitated charge injection by reducing the surface roughness. Consequently, the on-current and mobility of the ME-OTFT slightly increased compared to the undoped device. Additionally, when MoO X was fully covered on the ME-OTFT (MF-OTFT), it caused hole accumulation at the interface between DNTT and MoO X , forming a top channel. As a result, the off-current significantly increased, leading to an on-off ratio of 8.74 A/A, indicating the operation in depletion mode. Furthermore, we successfully demonstrated p-type unipolar inverters using the MF-OTFT as a pull-down device and the DNTT TFT as a pull-up device. Specifically, we implemented a zero-V GS connection inverter and a diode connection inverter with a maximum voltage gain of 22.06 V/V. The findings contribute to a deeper understanding of the effects of MoO X doping and its potential for enhancing device performance in unipolar circuits applications. [Display omitted] • Exploration of the charge flow mechanism based on the positioning of MoO X doping. • Comprehensive spectroscopic analysis of the doping effects of MoO X. • Present findings on a fully-doped transistor with depletion mode using MoO X. • Investigate the impact of doping on unipolar inverter circuits (zero-V GS connection inverter and diode connection inverter). [ABSTRACT FROM AUTHOR]