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Theoretical study of the energetics, strain fields, and semicoherent interface structures in...
- Source :
-
Journal of Applied Physics . 4/1/1999, Vol. 85 Issue 7, p3677. 19p. 4 Black and White Photographs, 17 Diagrams, 2 Charts, 10 Graphs. - Publication Year :
- 1999
-
Abstract
- Analyzes the energetics, interfacial stability, strain fields and film surface morphology in semiconductor heteroepitaxy. Application of continuum elasticity theory and atomistic simulations in the analysis; Computation of critical film thicknesses; Description of the atomistic simulation results; Results and discussion.
- Subjects :
- *EPITAXY
*FIELD theory (Physics)
*SCIENCE
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 85
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 1728326
- Full Text :
- https://doi.org/10.1063/1.369733