Mn2+/Pr3+/Tb3+ single‐doped Mg4Ga4Ge3O16 persistent luminescence materials for optical information storage application.

Persistent luminescence (PersL) phosphors are considered as promising candidates for the next generation of information storage medium. Mg4Ga4Ge3O16 (MGG) is an electron trapping material which exhibits defect luminescence, and the luminescent properties are easily tuned via doping various activated ions. In this work, undoped and Mn2+/Pr3+/Tb3+ single‐doped MGG phosphors were synthesized via high temperature solid phase reactions. X‐ray diffraction and scanning electron microscope results confirm that the activated ions tend to occupy Mg2+ sites. Excited at 265 nm, the MGG host exhibits a defect emission band peaked at 450 nm. Red, pink and green emissions are observed in the Mn2+/Pr3+/Tb3+ single‐doped MGG samples, which are ascribed to the Mn2+: 4T1(G) → 6A1(S), Pr3+: 1D2 → 3H4 and Tb3+: 5D4 → 7F5 transitions, respectively. All the samples exhibit bright PersL for minutes after the cessation of excitation. The energy transfer, concentration quenching, luminescence decay and afterglow mechanisms are also discussed in detail. The phosphors exhibit efficient thermal and optical stimuli response, showing great potentials in the optical information storage. [ABSTRACT FROM AUTHOR]