Reduced thermal resistance of amorphous Al2O3 thin films on β-Ga2O3 and amorphous SiO2 substrates via rapid thermal annealing.

The impact of rapid thermal annealing (1000 °C for 1 min) on the thermal transport properties of amorphous alumina (a-Al2O3) thin films grown by atomic layer deposition on β − Ga 2 O 3 and amorphous silica (a-SiO2) substrates is determined using frequency-domain thermoreflectance measurements. The annealing more than doubles the a-Al2O3 thermal conductivity for both substrates (1.54 ± 0.13 to 3.14 ± 0.27 W m−1 K−1 for β − Ga 2 O 3 and 1.60 ± 0.14 to 3.87 ± 0.33 W m−1 K−1 for a-SiO2) while keeping the film amorphous. The thermal conductivity increase is attributed to partial recrystallization and off-gassing of embedded impurities. Annealing halves the thermal boundary resistance of the a-Al2O3/a-SiO2 interface (10.5 ± 1.0 to 4.47 ± 0.42 m2 K GW−1), which is attributed to compositional mixing and structural reorganization that are enabled by the elastic matching of these two materials. The thermal boundary resistance of the a-Al2O3/ β − Ga 2 O 3 interface is not affected by annealing due to the elastic mismatch. Reducing the thermal resistance of a-Al2O3 dielectric films and adjacent interfaces by annealing will promote lateral heat spreading adjacent to hot spots and improve device longevity. [ABSTRACT FROM AUTHOR]