基于XPS与XAS的稀磁半导体GaMnN电子结构研究.

This paper is based on the X-ray photoelectron spectroscopy (XPS and X-ray absorption spectroscopy (XAS with the synchrotron radiation technology. It aims to test the electronic structures of dilute magnetic semiconductor GaMnN films with different Mn doping concentrations prepared by metal organic chemical vapor deposition technology (MOCVD, to explore the influences of Mn doping concentration on the local environment and electronic states of the magnetic atom Mn, and hence to expose the mechanism for the change of material ferromagnetism. The XPS and XAS data analysis show that Mn2+ and Mn3+ coexist in the film samples, the proportion of Mn2+ in sample D is as high as 70%-80%; the N vacancy increases with the increase of Mn doping concentration and it can reduce the hole concentration, as a result, the exchange interaction between Mn 3d and N 2p orbitals is reduced, which weakens the ferromagnetism of the system. In addition, Mn doping concentration also affects the strength of the p-d coupling hybridization ability of GaMnN films. When the Mn doping concentration is 0.018, the system has a strong p-d coupling hybridization ability. [ABSTRACT FROM AUTHOR]