利用W形空穴阻挡层降低 AlGaN基深紫外激光二极管的空穴泄露.

In this paper, V-shaped and W-shaped hole blocking layer (HBL) structures are designed to re- duce the hole leakage into the n-type region of AlGaN -based deep ultraviolet laser diodes (DUV - LDs). DUV - LDs with reference rectangular, V-shaped and W-shaped hole - blocking layer structures are simulated by Crosslight software. Numerical research on the energy band, n-region hole concentration, radiative recombination rate, electro-optical conversion efficiency, output power, carrier concentration in the active region and other characteristics of the three different structures, are conducted respectively. The results show that DUV - LD with a W-shaped hole blocking layer has higher hole effective barrier height, higher radiative recombination rate, lower hole leakage and better slope efficiency, which can effectively reduce the hole leakage in the n-type region of the deep ultraviolet laser diode, and improve its optical and electrical performance. [ABSTRACT FROM AUTHOR]