A comprehensive analysis of In0.15Sn0.85(Se0.95S0.05)2 crystals as a promising material for self-powered photodetector.

The direct vapour transport technique was used to grow novel quaternary In 0.15 Sn 0.85 (Se 0. 95 S 0. 05) 2 crystals. Field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), and energy dispersive X-ray analysis (EDX) with mapping were used to examine the surface morphology and chemical composition of grown crystals. The structural characterisation of grown crystals was analysed by X-ray diffraction (XRD), selected area electron diffraction (SAED), and Raman spectra. The grown crystals have a hexagonal crystalline structure, as confirmed by the structural characterisations. The direct optical bandgap of a grown crystal having 1.37 eV is obtained from absorption spectra. The current–voltage characteristics were studied within the temperature range of 108 K to 403 K. Also, the hall parameters have been obtained at room temperature. The thermodynamic and kinetic parameters were calculated from TGA, DTA, and DTG curves. The photodetector based on grown In 0.15 Sn 0.85 (Se 0. 95 S 0. 05) 2 quaternary crystal exhibits the outstanding self-powered photoresponse. The exhaustive photodetection properties of a photodetector based on a grown In 0.15 Sn 0.85 (Se 0. 95 S 0. 05) 2 crystal were examined as functions of various illumination intensities and wavelengths. Trap depth and photodetection parameters were also calculated. • The direct vapour transport technique was used to grow novel quaternary In 0.15 Sn 0.85 (Se 0.95 S 0.05) 2 crystals. • The grown crystals have a hexagonal crystalline structure, as confirmed by the structural characterisation. • The grown crystals are n-type semiconducting material and have direct optical bandgap of 1.37 eV obtained from hall effect analysis and absorption spectra, respectively. • Thermal degradation analysis has shown good thermal stability at high temperatures. The endothermic compound is showing nonspontaneous dissociation process. • The In 0.15 Sn 0.85 (Se 0.95 S 0.05) 2 quaternary crystal-based photodetector exhibits good self-powered photoresponse with a quick response time. [ABSTRACT FROM AUTHOR]