Self-organized submicron structures in photoresist films by UV-laser irradiation at water-confined conditions.

A new kind of self-organized pattern formation process has been found during laser irradiation of polymer films in water confinement just below the laser ablation threshold, resulting in a randomly oriented pattern with a period of about 475 nm. The morphology, orientation, period, and amplitude of these patterns are inconsistent with both laser-induced periodic surface structures that typically consist of linear grooves with periods smaller the laser wavelength and wrinkling patterns that feature a much larger period and appear at layered systems. Excimer laser (λ = 248 nm, tp = 25 ns) exposure of 650 nm thick photoresist films on silicon wafers cause the growth of irregular submicron patterns. The pattern morphology that is examined with imaging techniques is correlated to processing parameters. The amplitude of these laser-induced self-organized (LISE) submicron structures are strengthened with pulse number and laser fluence. The experimental results are discussed together with simulations of laser heating the photoresist film in water confinement. The proposed pattern formation mechanism of such laser-induced self-organized submicron structures at temporal excitation of a confined polymer surface comprises the formation of an oriented roughness based on LIPSS that are developed to wrinkled structures due to the transient formation of a soft subsurface area that provides conditions for wrinkling of the water cooled, stiff polymer surface by laser-induced stress fields. Size, amplitude, and morphology of the LISE pattern provide good properties for applications in such fields as wetting, friction, optics, and bioactivity. [ABSTRACT FROM AUTHOR]