In-situ fluorine-doped ZnSnO thin film and thin-film transistor.

In this paper, in-situ fluorine-doped ZnSnO (ZTO:F) thin films prepared by co-sputtering are proposed. It was found that the F had been successfully introduced into the ZTO thin films and distributed uniformly in the bulk. The corresponding top-contact bottom-gated ZTO:F thin film transistors (TFTs) were fabricated with an annealing temperature of 350 °C. The fabricated TFTs exhibit a field-effect mobility of 14.2 cm2V−1s−1, on-off ratio of over 109, and subthreshold swing (SS) as low as 87 mV/decade due to the incorporation of F. In addition, the bias stability of fabricated TFTs was also examined and the V t h shifts under negative gate bias stress are not more than ±0.1 V even without any passivation. It is expected that the In-free ZTO:F amorphous oxide semiconductor and the corresponding TFTs have potential for low-cost and environmentally safe fabrication. • ZTO:F TFTs were prepared by co-sputtering, exhibiting competitive electrical properties and excellent reliability. • This in-free ZTO:F TFTs exhibited considerable potential for low-cost and environmentally safe fabrication. [ABSTRACT FROM AUTHOR]