Breaking the Responsivity‐Bandwidth Trade‐Off Limit in GaN Photoelectrodes for High‐Response and Fast‐Speed Optical Communication Application.

MLA

Fang, Shi, et al. “Breaking the Responsivity‐Bandwidth Trade‐Off Limit in GaN Photoelectrodes for High‐Response and Fast‐Speed Optical Communication Application.” Advanced Functional Materials, vol. 33, no. 37, Sept. 2023, pp. 1–11. EBSCOhost, https://doi.org/10.1002/adfm.202214408.

APA

Fang, S., Li, L., Wang, D., Chen, W., Kang, Y., Wang, W., Liu, X., Luo, Y., Yu, H., Zhang, H., Memon, M. H., Hu, W., He, J., Gong, C., Zuo, C., Liu, S., & Sun, H. (2023). Breaking the Responsivity‐Bandwidth Trade‐Off Limit in GaN Photoelectrodes for High‐Response and Fast‐Speed Optical Communication Application. Advanced Functional Materials, 33(37), 1–11. https://doi.org/10.1002/adfm.202214408

Chicago

Fang, Shi, Liuan Li, Danhao Wang, Wei Chen, Yang Kang, Weiyi Wang, Xin Liu, et al. 2023. “Breaking the Responsivity‐Bandwidth Trade‐Off Limit in GaN Photoelectrodes for High‐Response and Fast‐Speed Optical Communication Application.” Advanced Functional Materials 33 (37): 1–11. doi:10.1002/adfm.202214408.