Author Correction: Exploring room temperature spin transport under band gap opening in bilayer graphene.

Graph: Figure 2(a) A 2D charge transport measurement map at RT showing the effect on the sheet resistance, , of applying a back gate voltage, Vbg, and top gate voltage, Vtg. (b) The same charge transport measurements transformed into a map as a function of carrier density, n, and electric displacement field, D. In both maps the symbols are shown where the spin transport measurements were made. b(inset) Sheet resistance close and parallel to the Dirac ridge (n 0). Also, "In doing so, we sweep a perpendicular magnetic field strength across a range of ±200 mT, which causes the diffusing electronic spins to experience Larmor precession, and fit the spin signal with the Hanle equation SP 22 sp ." now reads "In doing so, we sweep magnetic field strength perpendicular to the plane of the graphene (see Figure 1b), B SB sb , across a range of ±200 mT, which causes the diffusing electronic spins to experience Larmor precession, and fit the spin signal with the Hanle equation SP 22 sp .". [Extracted from the article]