HgCdTe‐Based Noncascaded Intersubband Injection Laser.

Herein, the possibility of creating a noncascade intersubband midinfrared injection laser based on HgCdTe with a minimum number of quantum wells is analyzed. An error‐tolerant laser structure with three quantum wells that is insensitive to the variations in the quantum well thickness is proposed. The calculations predict a modal gain of 35 cm−1 at the wavelength of approximately 9.2 μm at 77 K and the operating temperature up to 125 K. [ABSTRACT FROM AUTHOR]