Research on the mechanism and influence of P incorporation in N-rich nitride AlPN and growth of high quality AlPN/GaN HEMT.

In this work, high quality AlPN films are grown with an improved MOCVD system, in which the source transport circuit is adjusted to suppress the pre-reaction of Al and P. The mechanism of P incorporation into AlN, including the formation and characteristics of P anti-site defects in AlPN are investigated. In addition, the relationship between the P anti-site defects and the crystal quality is analyzed in detail. Further, high quality AlPN/GaN heterostructure with high density of sheet carriers and low leakage is grown, which are attributed to the lower N vacancies and lower surface status of AlPN barrier. The results in this work not only demonstrate the great potential of AlPN based structures in electronic device applications, but also provide instructive principles, such as anti-site defects, restraining pre-reactions, strain states, electrical properties and surface states in studying the novel N-rich group III-V semiconductors. • High quality AlPN films are grown by the modified MOCVD. • The mechanism of P incorporation into AlN is analyzed in detail. • AlPN/GaN heterostructure with high density of sheet carriers and low barrier leakage is grown. [ABSTRACT FROM AUTHOR]