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Atomic layer deposition meets metal–organic frameworks.

Authors :
Zhou, Zhongchao
Xu, Lina
Ding, Yihong
Xiao, Hongping
Shi, Qian
Li, Xinhua
Li, Aidong
Fang, Guoyong
Source :
Progress in Materials Science. Sep2023, Vol. 138, pN.PAG-N.PAG. 1p.
Publication Year :
2023

Abstract

[Display omitted] • Atomic layer deposition (ALD) used to fabricate metal–organic framework (MOF) materials is reviewed. • Seven combined methods using ALD technology and MOF synthesis are discussed. • Applications of MOF materials related to ALD technology are summarized. • New directions and perspectives for ALD-related MOF materials are provided. Atomic layer deposition (ALD) technology is an effective nanofabrication method used for various nanomaterials and thin films at the atomic level. Metal-organic framework (MOF) materials have a high porosity and specific surface area, and have been widely used in the fields of adsorption, separation, catalysis, sensors and devices. When ALD meets MOFs, some new combination methods can appear. In this review, the advances in MOFs synthesis related to ALD are summarized. These new synthetic methods of MOFs can be divided into seven categories: MOF gas-phase growth via ALD/MLD, MOF solvothermal growth on ALD metal oxide, MOF solvothermal growth and assembled on ALD metal oxide, MOF liquid-phase epitaxy growth on ALD metal oxide, MOF conversion from ALD metal oxide, MOF conversion via hydroxyl double salt from ALD metal oxide and MOF modification via ALD. Meanwhile, the upscaling applications of these ALD-related MOFs, such as in adsorption, separation, catalysis and energy, have further been reviewed. The perspectives of ALD based MOFs have also been provided. Such efforts are expected to provide guidance for developing new synthetic methods of MOFs related to ALD technology and thereby lead to new applications of ALD-related MOFs. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00796425
Volume :
138
Database :
Academic Search Index
Journal :
Progress in Materials Science
Publication Type :
Academic Journal
Accession number :
169789391
Full Text :
https://doi.org/10.1016/j.pmatsci.2023.101159