Cite
High performance and high yield sub-240 nm AlN:GaN short period superlattice LEDs grown by MBE on 6 in. sapphire substrates.
MLA
Nicholls, Jordan, et al. “High Performance and High Yield Sub-240 Nm AlN:GaN Short Period Superlattice LEDs Grown by MBE on 6 in. Sapphire Substrates.” Applied Physics Letters, vol. 123, no. 5, July 2023, pp. 1–6. EBSCOhost, https://doi.org/10.1063/5.0160177.
APA
Nicholls, J., Anderson, L., Lee, W., Ahn, J. J. S., Baskaran, A., Bang, H., Belloeil, M., Cai, Y., Campbell, J., Chai, J., Corpuz, N., Entoma, V., Hayden, B., Hung, T., Kim, H., King, D., Li, S., Liu, A., McMahon, D., & Nguyen, V. (2023). High performance and high yield sub-240 nm AlN:GaN short period superlattice LEDs grown by MBE on 6 in. sapphire substrates. Applied Physics Letters, 123(5), 1–6. https://doi.org/10.1063/5.0160177
Chicago
Nicholls, Jordan, Liam Anderson, William Lee, Jason Jae Seok Ahn, Ashokraj Baskaran, Hyunsik Bang, Matthias Belloeil, et al. 2023. “High Performance and High Yield Sub-240 Nm AlN:GaN Short Period Superlattice LEDs Grown by MBE on 6 in. Sapphire Substrates.” Applied Physics Letters 123 (5): 1–6. doi:10.1063/5.0160177.