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Degradation mechanism of HfAlOX/SiO2 stacked gate dielectrics studied by transient and steady-state leakage current analysis.
- Source :
-
Journal of Applied Physics . 4/1/2005, Vol. 97 Issue 7, p074505. 7p. 2 Diagrams, 9 Graphs. - Publication Year :
- 2005
-
Abstract
- Degradation mechanism of stacked high-k gate dielectrics has been studied with metal-oxide-semiconductor capacitors having HfAlOX/SiO2 films of various thickness combinations. A large leakage current with a peaked shape, named as the low-voltage peak current (LVPC), has been observed in the low-voltage region even in the initial current–voltage characteristics. It has been shown that a main part of LVPC is the transient current component controlled by the process of hole injection to traps in the vicinity of the HfAlOX/SiO2 interface through the interfacial SiO2 layer. By the electrical stress, both the transient and the steady-state current components monotonically increase with time having different rates. Steady-state component has significantly larger rate than the transient component, and the same rate with the stress-induced leakage current (SILC) observed in the high-voltage region, indicating that the steady-state component of LVPC should be regarded as the SILC in the higher-voltage region extending down to the lower gate voltage region where the LVPC is observed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 97
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 16683928
- Full Text :
- https://doi.org/10.1063/1.1884253