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Thermal Performance of Collector-Up HBTs for Small High-Power Amplifiers With a Novel Thermal via Structure Underneath the HBT Fingers.
- Source :
-
IEEE Transactions on Components & Packaging Technologies . Mar2005, Vol. 28 Issue 1, p34-38. 5p. - Publication Year :
- 2005
-
Abstract
- The article describes thermal performance of a special heterojunction bipolar transistor (HBT) structure for mobile communication systems, called a collector-up HBT and calculates the thermal resistance between the HBT finders and the bottom surface of a GaAs substrate using a finite element method. An HBT is a bipolar transistor whose emitter/base junction consists of different materials. A GaAs HBT has a higher current gain, a higher breakdown voltage, and a superior RF performance when compared to Si bipolar transistors. Normal HBTs have an emitter-up configuration. Because of the extrinsic area underneath the base electrodes, emitter-up HBTs suffer from large collector capacitance that limits the RF performance.
Details
- Language :
- English
- ISSN :
- 15213331
- Volume :
- 28
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Components & Packaging Technologies
- Publication Type :
- Academic Journal
- Accession number :
- 16608196
- Full Text :
- https://doi.org/10.1109/TCAPT.2005.843435