Cite
Sol-gel deposition and luminescence properties of lanthanide ion-doped Y2(1-x)Gd2xSiWO8 (0=x=1) phosphor films.
MLA
Han, X. M., et al. “Sol-Gel Deposition and Luminescence Properties of Lanthanide Ion-Doped Y2(1-x)Gd2xSiWO8 (0=x=1) Phosphor Films.” Applied Physics A: Materials Science & Processing, vol. 80, no. 7, Apr. 2005, pp. 1547–52. EBSCOhost, https://doi.org/10.1007/s00339-004-2506-4.
APA
Han, X. M., Lin, J., Pang, M. L., Yu, M., & Wang, S. B. (2005). Sol-gel deposition and luminescence properties of lanthanide ion-doped Y2(1-x)Gd2xSiWO8 (0=x=1) phosphor films. Applied Physics A: Materials Science & Processing, 80(7), 1547–1552. https://doi.org/10.1007/s00339-004-2506-4
Chicago
Han, X.M., J. Lin, M.L. Pang, M. Yu, and S.B. Wang. 2005. “Sol-Gel Deposition and Luminescence Properties of Lanthanide Ion-Doped Y2(1-x)Gd2xSiWO8 (0=x=1) Phosphor Films.” Applied Physics A: Materials Science & Processing 80 (7): 1547–52. doi:10.1007/s00339-004-2506-4.