Mercury telluride colloidal quantum-dot focal plane array with planar p-n junctions enabled by in situ electric field-activated doping.

The article presents a study which proposed a controllable in situ electric field-activated doping method to construct lateral p-n junctions in the short-wave infrared (SWIR) mercury telluride (HgTe) colloidal quantum dot (CQD)-based photodetectors with a simple planar configuration. Topics discussed include planar p-n junction focal play array (FPA) imagers, SWIR imaging using FPA imagers, and device fabrication and characterization.