Layer-transferred gallium arsenide heterojunction bipolar transistor on insulator substrate.

We report a first demonstration of GaAs HBT-OI fabricated using epitaxy growth, wafer bonding and layer transfer technique. Excellent bonding yield was found on the 200 mm GaAs HBT-OI wafer with wafer bowing of less than 90 µm. A dc gain of 20, and cutoff frequency (fT) of 6.5 GHz was measured for a device with emitter finger of 6 × 18 µm2. Its ideality factors for collector and base were 1.19 and 1.44, respectively. These results showed that the method of GaAs HBT-OI fabrication can be used for future integration of III-V on a common Si platform with low RF power dielectric attenuation. [ABSTRACT FROM AUTHOR]