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Absorption limit in direct gap III–V semiconductors.
- Source :
-
Journal of Applied Physics . 7/7/2023, Vol. 134 Issue 1, p1-4. 4p. - Publication Year :
- 2023
-
Abstract
- The comparison of experimentally found absorption limits, and their variations in compound semiconductors, with theoretical expectations was never a particularly studied subject, although absorption limits in semiconductors could be critical to certain optoelectronic device applications. We introduce a model, which accurately fits the distinct absorption saturation parameter linked to the effective electron density of states. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 134
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 164785519
- Full Text :
- https://doi.org/10.1063/5.0158120