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Field-effect bulk mobilities in polymer semiconductor films measured by sourcemeters.
- Source :
-
Review of Scientific Instruments . Jun2023, Vol. 94 Issue 6, p1-9. 9p. - Publication Year :
- 2023
-
Abstract
- Semiconducting polymers inherently exhibit polydispersity in terms of molecular structure and microscopic morphology, which often results in a broad distribution of energy levels for localized electronic states. Therefore, the bulk charge mobility strongly depends on the free charge density. In this study, we propose a method to measure the charge-density-dependent bulk mobility of conjugated polymer films with widely spread localized states using a conventional field-effect transistor configuration. The gate-induced variation of bulk charge density typically ranges within ±1018 cm−3; however, this range depends significantly on the energetic dispersion width of localized states. The field-effect bulk mobility and field-effect mobility near the semiconductor–dielectric interface along with their dependence on charge density can be simultaneously extracted from the transistor characteristics using various gate voltage ranges. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00346748
- Volume :
- 94
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Review of Scientific Instruments
- Publication Type :
- Academic Journal
- Accession number :
- 164665372
- Full Text :
- https://doi.org/10.1063/5.0143003