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Retraction: "Direct imaging of Si incorporation in GaAs masklessly grown on patterned Si substrates" [Appl. Phys. Lett. 58, 2090 (1991)].
- Source :
-
Applied Physics Letters . 6/19/2023, Vol. 122 Issue 25, p1-1. 1p. - Publication Year :
- 2023
-
Abstract
- Retraction: "Direct imaging of Si incorporation in GaAs masklessly grown on patterned Si substrates" [Appl. Phys. The editor and publisher are retracting the referenced article[1] due to substantial overlap with a previous publication.[2] Specifically, Figs. Grundmannet al., " Direct imaging of Si incorporation in GaAs masklessley grown on patterned Si substrates", Appl. Phys. [Extracted from the article]
- Subjects :
- *AUDITING standards
*GALLIUM arsenide
*QUANTUM wells
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 122
- Issue :
- 25
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 164486157
- Full Text :
- https://doi.org/10.1063/5.0146966