Development of low-temperature bonding platform using ultra-thin area selective deposition for heterogeneous integration.

[Display omitted] • This research thoroughly investigates the ultrathin nanoscale bonding structure using area-selective deposition. • The area-selective passivation bonding platform simplifies the complex conventional passivation process. • With the area-selective passivation bonding platform, chips can be bonded at temperatures below 200 ℃. • This research provides a detailed investigation of the bonding mechanism of the area-selective passivation bonding platform. The Cu-Cu bonding technology is an indispensable vehicle for achieving heterogeneous integration, providing architects and designers with a new solution to address the limitations of transistor miniaturization. In this study, a next-generation efficient-process passivation bonding technology has been developed and investigated. The area-selective passivation bonding platform enables chips to be bonded at ambient temperatures below 200 ℃, while mitigating potential patterning issues and simplifying the complex conventional passivation process. The surface exploration of the area-selective films and their bonding mechanism have been thoroughly investigated through the use of transmission electron microscope (TEM) analyses. The results demonstrate exceptional film quality and the bonded reliability of the area-selective films. Furthermore, devices bonded using an optimized process exhibit more reliable mechanical strength than those bonded using conventional passivation methods. [ABSTRACT FROM AUTHOR]