Phase transition behavior and electrical resistance stability of Ge2Sb2Te5/Sb superlattice-like films on a flexible substrate.

In order to validate the flexible storage potential, [Ge 2 Sb 2 Te 5 (3 nm)/Sb(7 nm)] 5 superlattice-like phase change films on flexible polyetheretherketone substrates were prepared by magnetron sputtering. The phase transition behavior and the effect of different bending cycles on the properties were investigated. Compared with conventional rigid Si/SiO 2 substrate, [Ge 2 Sb 2 Te 5 (3 nm)/Sb(7 nm)] 5 films based on a flexible substrate possessed better thermal stability and surface adhesion. The superlattice-like structure was confirmed by transmission electron microscopy. PCM devices based on polyetheretherketone substrates were fabricated and the electrical conversion characteristics before and after bending were verified and compared. [ABSTRACT FROM AUTHOR]