Cite
Near IR Bandgap Semiconducting 2D Conjugated Metal‐Organic Framework with Rhombic Lattice and High Mobility.
MLA
Sporrer, Lukas, et al. “Near IR Bandgap Semiconducting 2D Conjugated Metal‐Organic Framework with Rhombic Lattice and High Mobility.” Angewandte Chemie International Edition, vol. 62, no. 25, June 2023, pp. 1–7. EBSCOhost, https://doi.org/10.1002/anie.202300186.
APA
Sporrer, L., Zhou, G., Wang, M., Balos, V., Revuelta, S., Jastrzembski, K., Löffler, M., Petkov, P., Heine, T., Kuc, A., Cánovas, E., Huang, Z., Feng, X., & Dong, R. (2023). Near IR Bandgap Semiconducting 2D Conjugated Metal‐Organic Framework with Rhombic Lattice and High Mobility. Angewandte Chemie International Edition, 62(25), 1–7. https://doi.org/10.1002/anie.202300186
Chicago
Sporrer, Lukas, Guojun Zhou, Mingchao Wang, Vasileios Balos, Sergio Revuelta, Kamil Jastrzembski, Markus Löffler, et al. 2023. “Near IR Bandgap Semiconducting 2D Conjugated Metal‐Organic Framework with Rhombic Lattice and High Mobility.” Angewandte Chemie International Edition 62 (25): 1–7. doi:10.1002/anie.202300186.