Back to Search
Start Over
In-plane gate graphene transistor with epitaxially grown molybdenum disulfide passivation layers.
- Source :
-
Scientific Reports . 6/6/2023, Vol. 13 Issue 1, p1-7. 7p. - Publication Year :
- 2023
-
Abstract
- We demonstrate in-plane gate transistors based on the molybdenum disulfide (MoS2)/graphene hetero-structure. The graphene works as channels while MoS2 functions as passivation layers. The weak hysteresis of the device suggests that the MoS2 layer can effectively passivate the graphene channel. The characteristics of devices with and without removal of MoS2 between electrodes and graphene are also compared. The device with direct electrode/graphene contact shows a reduced contact resistance, increased drain current, and enhanced field-effect mobility. The higher field-effect mobility than that obtained through Hall measurement indicates that more carriers are present in the channel, rendering it more conductive. [ABSTRACT FROM AUTHOR]
- Subjects :
- *MOLYBDENUM disulfide
*INDIUM gallium zinc oxide
*GRAPHENE
*PASSIVATION
*TRANSISTORS
Subjects
Details
- Language :
- English
- ISSN :
- 20452322
- Volume :
- 13
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Scientific Reports
- Publication Type :
- Academic Journal
- Accession number :
- 164131576
- Full Text :
- https://doi.org/10.1038/s41598-023-36405-9